Date: 2018-03-22   /   Research Highlight
Superior electronic, chemical and thermal properties of wide bandgap gallium nitride (GaN), compared to silicon, have resulted in much interest for developing high power and high frequency switching transistors as well as high performance chemical micro-sensors. The initial material is grown by metal organic chemical vapor deposition (MOCVD) on silicon, sapphire or silicon carbide substrates. … Continue reading "GaN based gas sensors"
Date: 2018-01-04   /   Research Highlight
Semiconductor refers to a material of conductivity between the conductor and the insulator at room temperature.
Date: 2017-03-16   /   Research Highlight
Recently, the team composed of Professor Xiaowei Sun, Assistant Professor Kai Wang and Shuming Chen from the Department of Electrical and Electronic Engineering of the College of Engineering, published their recent progress of high brightness perovskite quantum dot light-emitting diodes in Advanced Materials (impact factor: 18.96). This team has published 6 research articles last year on this topic in journals such as Advanced Energy Materials, Advanced Functional Materials, Nano Energy, ACS Applied Materials & Interfaces, with total impact of more than 76.