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师资队伍

化梦媛--助理教授

个人主页

化梦媛博士,主要研究工作集中在氮化镓功率器件,包括器件工艺与制备,材料表征,器件物理分析和可靠性、稳定性研究。课题负责人在国际主流会议(如IEDM,ISPSD等)和高水平期刊(IEEE EDL, IEEE TED等)发表论文40余篇。化梦媛博士自2018年9月起加入南方科技大学电子与电气工程系担任助理教授,研究课题将继续集中在新一代宽禁带半导体器件。

教育经历

2013-2017:香港科技大学,电子与计算机工程系,博士学位

2009-2013:清华大学,数学物理基础科学班,学士学位

工作经历

2018.09-至今:南方科技大学,电子与电气工程系,助理教授

2017.09-2018.09: 香港科技大学,电子与计算机工程系,博士后

研究简介

宽禁带半导体器件

氮化镓电力电子器件

半导体器件工艺和制备

半导体器件物理及仿真

可靠性、稳定性研究

研究领域:

宽禁带半导体器件

所获荣誉

2017年,最佳青年学术奖,IEEE

代表文章

  1. M. Hua,J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. J. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM 2017),San Francisco, CA, USA, Dec. 2-6, 2017.
  2. M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNxGate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016.
  3. M. Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen, "High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer," 2017 Int. Symp. On Power Semiconductor Devices and ICs(ISPSD’17)Charitat Award,Sapporo, Japan, May 28-June 1, 2017.
  4. M. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen, "Dependence of VTHStability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET,"IEEE Elec. Dev. Lett., vol. 39, no. 3, pp. 413–416, Jan. 2018.
  5. M. Hua, J. Wei, G. Tang, Z. Zhang, X. Cai, N. Wang, and K. J. Chen, "Normally-off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer,"IEEE Elec. Dev. Lett., vol. 38, no. 7, pp. 929–932, Jul. 2017.
  6. M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT," IEEE Elec. Dev. Lett., vol. 37, No. 3, pp. 265-268, 2016.
  7. M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "Characterization of Leakage and Reliability of SiNxGate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs, " IEEE Trans. Electron Devices, vol. 62, No. 10, pp. 3215-3222, 2015.
  8. M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, " GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low Pressure Chemical Vapor Deposition Silicon Nitride (LPCVD-SiNx) as Gate Dielectric," IEEE Elec. Dev. Lett., vol. 36, No. 5, pp. 448-450, 2015.

招聘信息

本课题组目前正在招聘研究助理教授、博士后、科研助理、博士生、硕士生,同时欢迎来自国内外的优秀访问学者和交流学生,有意加入者请将简历发送至:huamy@sustc.edu.cn

联系方式

地址:深圳市南山区南方科技大学C栋213室

电邮:huamy@sustc.edu.cn

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地址:广东省深圳市南山区学苑大道1088号
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